Introduction Applied materials: Passivation layer: SiO2, SiNx Backsilicon Adhesive layer: TaN Through hole: W
Feature:1. Etching of passivation layer with or without holes; 2. Etching of adhesive layer; 3. Back silicon etching
Specification: 1. Prevent chips from flying 2. Minimum node that can be processed: 14nm; 3. SiO2/SiNx etching rate: 50~150 nm/min; 4. Etched surface roughness:<1 nm; 5. Support passivation layer, adhesion layer and back silicon etching; 6. Selection ratio of Cu/Al:>50 7. All-in-one machine LxWxH: 1300mmX750mmX950mm 8. Support one-click execution