MDXN-31D4 High precision double-sided lithography machine
Purpose and characteristics: This equipment is mainly used for the development and production of small and medium-sized integrated circuits, semiconductor components, and surface acoustic wave devices. Due to the advanced leveling mechanism and low leveling force, this machine is not only suitable for the exposure of various types of substrates, but also for the exposure of easily fragmented substrates such as potassium arsenide and phosphate steel, as well as the exposure of non circular and small substrates.
Main technical parameters: 1. Exposure type: contact type, plate alignment, double-sided single exposure 2. Exposure area: 110X110mm; 3. Exposure uniformity: ≥ 97%; 4. Exposure intensity: 0-30mw/cm2 adjustable; 5. UV beam angle: ≤ 3 ° 6. Central wavelength of ultraviolet light: 365nm; 7. UV light source lifespan: ≥ 20000 hours;; 8. Working surface temperature: ≤ 30 ºC 9. Adopting electronic shutter; 10. Exposure resolution: 1 μ M (exposure depth is about 10 times the line width) 11. Exposure mode: Double sided simultaneous exposure 12. Alignment range: x: ± 5mm Y: ± 5mm 13. Plate alignment accuracy: 2 μ m 14. Rotation range: Q-direction rotation adjustment ≤ ± 5 ° 15. Microscopic system: dual field of view CCD system, objective lens 1.6X~10X, computer image processing system, 19 "LCD monitor; Total magnification 91-570x 16. Mask size: Capable of vacuum absorbing 5 "square masks, with no special requirements for the thickness of the mask (ranging from 1 to 3mm). 17. Substrate size: Suitable for 4 "substrates, with substrate thickness ranging from 0.1 to 2mm. 18. When ordering, there are no special requirements, and a 5 "X5 shelf is standard; you can customize shelves below 5" X5:
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