| After-sales Service: | 1 Year |
|---|---|
| Demoulding: | Pull Core |
| Condition: | New |
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MCXJ-MLS8 Maskless lithography System
Sample:
Equipment structure diagram
Exposure host structure diagram
| structure | illustrate |
| Exposing the countertop | Exposure area: countertop, substrate placement area |
| Optical system | Laser emission molding area |
| Environmental control system | Control the internal temperature and positive pressure of the device |
| Platform system | Controls the movement of the exposure table to complete the operation of the exposure path |
| Control system | Control system of the entire equipment |
| No. | Environment | Require |
| 1 | Light source environment | Yellow light |
| 2 | Temperature | 22ºC±2ºC |
| 3 | Humidity | 50%±10% |
| 4 | Cleanliness | 1000 |
| 5 | CDA | 0.6±0.1Mpa,200LPM, dry, clean air |
| 6 | Power supply | 220~240V,50/60Hz,2.5KW;The ground wire must be grounded, |
| 7 | Cooling water | Temp.:10ºC~ 20ºC Pressure:0.3MPa ~ 0.5MPa Flow rate:20L/min Pressure difference:0.3MPa Take over caliber:Rc3/8 |
| 8 | Venue | level:±3mm/3000mm shake:VC-B Bearing:750kg/ |
| 10 | Internet | One network port |
| 11 | Machine size | 1300*1100*2100mm |
| 12 | Device weight | 1500kg |
| No. | Project | Spec. | Remark |
| 1 | Resolution | 0.6um/or other requirement | AZ703,AZ1350 |
| 2 | CDU | ±10%@1um | |
| 3 | Substrate thickness | 0.2mm~4mm | |
| 4 | Date grid accuracy | 60nm | |
| 5 | Overlay | ±500nm | 130mmx130mm |
| 6 | Stitching accuracy | ±200nm | AZ703 |
| 7 | MAX exposure size | 190X190mm | |
| 8 | Throughput | ≥300mm2/min | ≤50mj/cm2; |
| 9 | light source | LD 375nm | |
| 10 | light power | 6W | |
| 11 | Energy uniformity | ≥95% | |
| 12 | light life | 10000hr |
Note: Due to the difference in exposure principle and wavelength, the process parameters of MCXJ-MLS8 may be different from those of traditional exposure machines. The resolution of the photoresist used in the analytical test needs to be better than 0.6um at a wavelength of 375nm.
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