After-sales Service: | 1 Year |
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Warranty: | 1 Year |
Type: | Rie |
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Reactive ion etching system (RIE)
Reactive ion etching (RIE) can be used to prepare micro-nano structures and is one of the semiconductor manufacturing process technologies. During the RIE etching process, various active particles in the plasma form volatile products with the surface of the material. These products are taken away from the surface of the material, and finally anisotropic microstructure etching of the surface of the material is achieved. The reactive ion etcher (RIE) series products are based on flat-plate capacitive coupled plasma technology and are suitable for patterned etching of silicon materials such as single crystal silicon, polycrystalline silicon, silicon nitride (SiNy), silicon oxide (SiO), quartz (Quartz) and silicon carbide (SiC); can be used for patterning and material de-layering etching of organic materials such as photoresist (PR), PMMAHDMS and other materials; can be used for physical etching of metal materials such as nickel (Ni), chromium (Cr) and ceramic materials; can be used for room temperature indium phosphide (InP) material etching. For some etching with higher process requirements, our ICP RIE etching can also be used.Item | MD150-RIE | MD200-RIE | MD200C-RIE |
Product size | ≤6 inches | ≤8 inches | ≤8 inches |
RF power source | 0-300W/500W/1000W Adjustable,automatic matching | ||
Molecular pump | -/620(L/s)/1300(L/s)/Custom | Antiseptic620(L/s)/1300(L/s)/Custom | |
Foreline pump | Mechanical pump/dry pump | Dry pump | |
Process pressure | Uncontrolled pressure/0-1Torr controlled pressure | ||
Gas type | H/CH4/O2/N2/Ar/SF6/CF4/ CHF3/C4F8/NF3/Custom (Up to 9 channels, no corrosive & toxic gas) |
H2/CH4/O2/N2/Ar/F6/CF4/ CHF3/C4F8/NF3/Cl2/BCl3/HBr(Up to 9 channels) | |
Gas range | 0~5sccm/50sccm/100sccm/200sccm/300sccm/500sccm/custom | ||
LoadLock | Yes/No | Yes | |
Sample tem control | 10°C~Room tem/-30°C~100°C/Custom | -30°C~100°C /Custom | |
Back helium cooling | Yes/No | Yes | |
Process cavity lining | Yes/No | Yes | |
Cavity wall tem control | No/Roomtem~60/120°C | Room tem-60/120°C | |
Control System | Auto/custom | ||
Etching material | Silicon-based:Si/SiO2/SiNx··· IV-IV: SiC Magnetic materials/alloy materials Metallic material: Ni/Cr/Al/Au..... Organic material: PR/PMMA/HDMS/Organic film...... |
Silicon-based: Si/SiO2/SiNx...... III-V(3): InP/GaAs/GaN...... IV-IV: SiC II-VI (3): CdTe...... Magnetic materials/alloy materials Metallic material: Ni/Cr/A1/Au...... Organic material: PR/PMMA/HDMS /organic film... |