Semiconductor Device Fabrication Fab Wafer Fab Rie Reactive Ion Etching Failure Analysis Equipment Beol Feol

Product Details
After-sales Service: 1 Year
Certification: CE
Warranty: 12 Months
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  • Semiconductor Device Fabrication Fab Wafer Fab Rie Reactive Ion Etching Failure Analysis Equipment Beol Feol
  • Semiconductor Device Fabrication Fab Wafer Fab Rie Reactive Ion Etching Failure Analysis Equipment Beol Feol
  • Semiconductor Device Fabrication Fab Wafer Fab Rie Reactive Ion Etching Failure Analysis Equipment Beol Feol
  • Semiconductor Device Fabrication Fab Wafer Fab Rie Reactive Ion Etching Failure Analysis Equipment Beol Feol
  • Semiconductor Device Fabrication Fab Wafer Fab Rie Reactive Ion Etching Failure Analysis Equipment Beol Feol
  • Semiconductor Device Fabrication Fab Wafer Fab Rie Reactive Ion Etching Failure Analysis Equipment Beol Feol
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  • Overview
  • Product Description
Overview

Basic Info.

Model NO.
0
Automatic Grade
Semiautomatic
Installation
Vertical
Driven Type
Electric
Transport Package
1300mmx750mmx950mm
Specification
1300mmX750mmX950mm
Trademark
minder-hightech
Origin
China
Production Capacity
100

Product Description

Product Description

 

Failure analysis equipment


Semiconductor Device Fabrication Fab Wafer Fab Rie Reactive Ion Etching Failure Analysis Equipment Beol FeolSemiconductor Device Fabrication Fab Wafer Fab Rie Reactive Ion Etching Failure Analysis Equipment Beol FeolSemiconductor Device Fabrication Fab Wafer Fab Rie Reactive Ion Etching Failure Analysis Equipment Beol Feol
Specification:
1. Prevent chips from flying
2. Minimum node that can be processed: 14nm;
3. SiO2/SiNx etching rate: 50~150 nm/min;
4. Etched surface roughness:<1 nm;
5. Support passivation layer, adhesion layer and back silicon etching;
6. Selection ratio of Cu/Al:>50
7. All-in-one machine LxWxH: 1300mmX750mmX950mm
8. Support one-click execution

Introduction
Applied materials:
Passivation layer: SiO2, SiNx
Backsilicon
Adhesive layer: TaN
Through hole: W

Feature:1. Etching of passivation layer with or without holes; 2. Etching of adhesive layer; 3. Back silicon etching

Semiconductor Device Fabrication Fab Wafer Fab Rie Reactive Ion Etching Failure Analysis Equipment Beol FeolSemiconductor Device Fabrication Fab Wafer Fab Rie Reactive Ion Etching Failure Analysis Equipment Beol FeolSemiconductor Device Fabrication Fab Wafer Fab Rie Reactive Ion Etching Failure Analysis Equipment Beol FeolSemiconductor Device Fabrication Fab Wafer Fab Rie Reactive Ion Etching Failure Analysis Equipment Beol Feol
Specification:
1. Prevent chips from flying
2. Minimum node that can be processed: 14nm;
3. SiO2/SiNx etching rate: 50~150 nm/min;
4. Etched surface roughness:<1 nm;
5. Support passivation layer, adhesion layer and back silicon etching;
6. Selection ratio of Cu/Al:>50
7. All-in-one machine LxWxH: 1300mmX750mmX950mm
8. Support one-click execution

Introduction

Applied materials:
Passivation layer: SiO2, SiNx
Backsilicon
Adhesive layer: TaN
Through hole: W

Feature:1. Etching of passivation layer with or without holes; 2. Etching of adhesive layer; 3. Back silicon etching





 

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