Reactive Ion Etching System Rie Failure Analysis Icp Ebeam

• After-sales Service: 3 Year
• Warranty: 1 Year
• Type: Electrical Etching Machine
• Object: Rie
• Usage: Rie
• Precision: High Precision
• Model NO.: MD150-RIE MD200-RIE MD200C-RIE
• Condition: New
• Trademark: minder-hightech
• Origin: China
• Production Capacity: 100

Product Description

Reactive ion etching system
RIE

Applied materials:
Passivation layer: SiO2, SiNx
Backsilicon
Adhesive layer: TaN
Through hole: W

Feature:1. Etching of passivation layer with or without holes; 2. Etching of adhesive layer; 3. Back silicon etching

Project configuration and machine structure diagram

Item	MD150-RIE	MD200-RIE	MD200C-RIE
Product size	≤6 inches	≤8 inches	≤8 inches
RF power source	0-300W/500W/1000W Adjustable,automatic matching
Molecular pump	-/620(L/s)/1300(L/s)/Custom		Antiseptic620(L/s)/1300(L/s)/Custom
Foreline pump	Mechanical pump/dry pump		Dry pump
Process pressure	Uncontrolled pressure/0-1Torr controlled pressure
Gas type	H/CH4/O2/N2/Ar/SF6/CF4/ CHF3/C4F8/NF3/Custom (Up to 9 channels, no corrosive & toxic gas)		H2/CH4/O2/N2/Ar/F6/CF4/ CHF3/C4F8/NF3/Cl2/BCl3/HBr(Up to 9 channels)
Gas range	0~5sccm/50sccm/100sccm/200sccm/300sccm/500sccm/custom
LoadLock	Yes/No		Yes
Sample tem control	10°C~Room tem/-30°C~100°C/Custom		-30°C~100°C /Custom
Back helium cooling	Yes/No		Yes
Process cavity lining	Yes/No		Yes
Cavity wall tem control	No/Roomtem~60/120°C		Room tem-60/120°C
Control System	Auto/custom
Etching material	Silicon-based:Si/SiO2/SiNx··· IV-IV: SiC Magnetic materials/alloy materials Metallic material: Ni/Cr/Al/Au..... Organic material: PR/PMMA/HDMS/Organic film......		Silicon-based: Si/SiO2/SiNx...... III-V(3): InP/GaAs/GaN...... IV-IV: SiC II-VI (3): CdTe...... Magnetic materials/alloy materials Metallic material: Ni/Cr/A1/Au...... Organic material: PR/PMMA/HDMS /organic film...

Process result
^{Silicon-based material etching
Silicon-based materials, nano-imprint patterns, array
patterns and lens pattern etching}

InP normal temperature etching
Pattern etching of InP based devices used in optical communication, including waveguide structure, resonant cavity structure ridge structure etc

SiC material etching
Suitable for microwave devices, power devices, etc

Physical sputtering, etching  Organic materiale tching

It is applied to the etching of difficult to etch materials such as some metals (such as Ni / Cr) and ceramics, and the patternede tching of materials is realized by physical bombardment.

It is used for etching and removal of organic compounds such as photoresist (PR)/ PMMA / HDMS / polymer

Cermet film material (Au/Ni/Cr/Al₂O₃)


Display of failure analysis results


Specification:
1. Prevent chips from flying
2. Minimum node that can be processed: 14nm;
3. SiO2/SiNx etching rate: 50~150 nm/min;
4. Etched surface roughness:<1 nm;
5. Support passivation layer, adhesion layer and back silicon etching;
6. Selection ratio of Cu/Al:>50
7. All-in-one machine LxWxH: 1300mmX750mmX950mm
8. Support one-click execution

Customer site: