• Mdxn-25D4 High Precision Mask Aligner / Photolithography Machine
  • Mdxn-25D4 High Precision Mask Aligner / Photolithography Machine
  • Mdxn-25D4 High Precision Mask Aligner / Photolithography Machine
  • Mdxn-25D4 High Precision Mask Aligner / Photolithography Machine

Mdxn-25D4 High Precision Mask Aligner / Photolithography Machine

After-sales Service: 1year
Condition: New
Certification: CE
Warranty: 12 Months
Automatic Grade: Semiautomatic
Installation: Vertical
Diamond Member Since 2017

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Basic Info.

Model NO.
MDXN-25D4
Driven Type
Electric
Transport Package
1000kg
Trademark
minder-hightech
Origin
China
Production Capacity
1000

Product Description

MDXN-25D4 High precision mask aligner

Purpose and characteristics:
This equipment is mainly used for the development and production of small and medium-sized integrated circuits, semiconductor components, and surface acoustic wave devices. Due to the advanced leveling mechanism and low leveling force, this machine is not only suitable for the exposure of various types of substrates, but also for the exposure of easily fragmented substrates such as potassium arsenide and phosphate steel, as well as the exposure of non circular and small substrates.
Main technical parameters:
1. Exposure type: single side exposure
2. Exposure area: 110X110mm;
3. Exposure uniformity: ≥ 97%;
4. Exposure intensity: 0-30mw/cm2 adjustable;
5. UV beam angle: ≤ 3 °
6. Central wavelength of ultraviolet light: 365nm;
7. UV light source lifespan: ≥ 20000 hours;(2 years warranty)
8. Adopting electronic shutter;
9. Exposure resolution: 1 μ M
10.Camara view range: ± 15mm Y: ± 15mm     
11. Alignment range: x: ± 4mm Y: ± 4mm Q:±3°.
12. Alignment accuracy : 1um (under good environment condition)
13.Separation distance range:0-50um adjustable.
14.Exposure method: contact exposure.(hard/soft/micro touch)
15.Balance method: Air flotation.
16. Microscopic system: dual field of view CCD system, objective lens 1.6X~10X, computer image processing system, 19 "LCD monitor; Total magnification 91-570x. distance of objective : 50-120mm.
17. Mask size: 127*127mm;102*102mm
18. Substrate size: Φ102mm;Φ76mm
19. Substrate thickness: ≤1mm
20.Exposure time:0-999.9 seconds adjustable.
21.Power: 220V 50Hz 1.5kw.
22.air source?0.4Mpa
23.Vacuum degree: -0.07MPa~-0.09Mpa
 

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