Inductively Coupled Plasma Etching Machine-Icp for Si/Sio2/Sinx/ Sic

• After-sales Service: Installation, Training
• Warranty: One Year Warranty
• Type: Electrical Etching Machine
• Model NO.: MD150-SICP
• Object: Silicon-Based:Si/Sio2/Sinxsic
• Usage: Corrosion & Hollowed-out
• Certification: ISO9001: 2000, CE
• Etching Type: Reactive Ion Etching
• Precision: High Precision
• Condition: New
• Transport Package: Wooden Case
• Specification: 1170*750*1080mm
• Trademark: Minder-Hightech
• Origin: China
• Production Capacity: 10set/Month

Product Description

Product Description

 

Inductively coupled plasma etching machine-ICP

Item	MD150S-ICP	MD200S-ICP	MD150CS-ICP	MD200CS-ICP	MD300C-ICP
Product size	≤6 inches	≤8 inches	≤6 inches	≤8 inches	Custom≥12inches
SRF Power source	0~1000W/2000W/3000W/5000WAdjustable,automatic matching\,13.56MHz/27MHz
BRF Power source	0~300W/0~500W/0~1000WAdjustable, automatic matching,2MHz/13.56MHz
Molecular pump	Non corrosive : 600 /1300 (L/s)/Custom		Anti-corrosion:600 /1300 (L./s)/Custom		600/1300(L/s) /Custom
Foreline pump	Mechanical pump / dry pump		Anti corrosion dry pump		Mechanical pump / dry pump
Pre pumping pump	Mechanical pump / dry pump		Mechanical pump / dry pump
Process pressure	Uncontrolled pressure/0-0.1/1/10Torr controlled pressure
Gas type	H2/CH4/O2/N2/Ar/SF6/CF4/ CHF3/C4F8/NF3/NH3/C2F6/Custom (Up to 12 channels, no corrosive & toxic gas)		H2/CH4/O2/N2/Ar/SF6/CF4/CHF3/ C4F8/NF3/NH3/C2F6/Cl2/BCl3/HBr/ Custom(Up to 12 channels)
Gas range	0~5sccm/50sccm/100sccm/200sccm/300sccm/500sccm/1000sccm/Custom
LoadLock	Yes/No		Yes
Sample tem control	10°C~Roomtem/ -30°C~150°C /Custom		-30°C~200°C/Custom
Back helium cooling	Yes/No		Yes
Process cavity lining	Yes/No		Yes
Cavity wall tem control	No/Room tem-60/120°C		Room tem~60/120°C
Control System	Auto/custom
Etching material	Silicon-base: Si/SiO2/ SiNx/ SiC..... Organic materials:PR/Organic film......		Silicon-base: Si/SiO2/SiNx/SiC III-V: InP/GaAs/GaN...... IV-IV: SiC II-VI: CdTe...... Magnetic material / alloy material Metallic materials: Ni/Cr/Al/Cu/Au... Organic materials: PR/Organic film...... Silicon deep etching

Process result
Quartz / silicon / grating etching
Using BR mask to etch quartz or silicon materials, the grating array pattern has the thinnest line up to 300nm and the sidewall steepness of the pattern is close to > 89° , which can be applied to 3D display, micro optical devices, optoelectronic communication, etc


Compound / semiconductor etching
Accurate control of sample surface temperature can well control the etching morphology of GaN based, GaAs, InP and metal materials. lt is suitable for blue lED devices, lasers, optical communication and other applications.


Silicon-based material etching
it is suitable for etching silicon based materials such as Si, SiO₂, and SiNx. lt can realize silicon line etching above 50nm and silicon deep hole etching below 100um