Semiconductor Device Fabrication Fab Wafer Fabrication Feol Substrate CMP Cyctem for Lapping

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After-sales Service: 1 Year
Warranty: 1 Year
Certification: CE
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  • Semiconductor Device Fabrication Fab Wafer Fabrication Feol Substrate CMP Cyctem for Lapping
  • Semiconductor Device Fabrication Fab Wafer Fabrication Feol Substrate CMP Cyctem for Lapping
  • Semiconductor Device Fabrication Fab Wafer Fabrication Feol Substrate CMP Cyctem for Lapping
  • Semiconductor Device Fabrication Fab Wafer Fabrication Feol Substrate CMP Cyctem for Lapping
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Basic Info.

Model NO.
MDS8104LMFR
Condition
New
Number of Station
4
Facing & Grooving Speed Not Include in P
0-120mm/M
Total Weight
2200kg
Floor Space
2200*1200mm
Cylinder Bar Rotate Speed
0-40 Rpm
Transport Package
Sea
Specification
2000KG
Trademark
MINDERHIGHTECH
Origin
Guangzhou
HS Code
8501109101

Product Description

MDS8104LMFR/MDS8104PMFR

SEMIAUTO SUBSTRATE LAPPING/POLISHING MACHINE
Machine Application

 

Process Type

 

Sort by Process Material

 

Sort by Application
SINGLE SIDE
PLATE
LAPPING &
POLISHING
Metal & Alloy
Ceramic
Oxide
Carbide
Glass
Plastic

Semi Conductor
LED substrate
Si, SiC, Ge, Ge-Si, GaN, GaAs, GaAsAl, GaAsP, InSb, InP, ZnO, AlN, Al2O3, etc.
Resin PE,E/VAC,SBS,SBR,NBR,SR,BR,PR
PCB ,, adhensive,coating,circuit
Optical ,,,HUDoptical lens,HUD glass, screen glass
Radar
Gemstaone
Others
Oxide coating plate
Jade,sapphire,agate etc
Valve sealing ring. Micrometer Diamond,bearing,etc
Lapping can only remove slight thickness of object.if thining margin>=100um, thinner machine are needed.(contact us for thinner)
Machine Specification
Machine Class
Semiconductor Device Fabrication Fab Wafer Fabrication Feol Substrate CMP Cyctem for Lapping
 
Standard Specification
Machine Series MDS8104LMFR
Plate diameter Φ810mm
Max. Object Diameter Φ350 mm
Number of station 4
Plate Rotate Speed 0-90 RPM
Cylinder Bar Rotate Speed 0-40 RPM
Facing & Grooving Speed
Not include in Polishing
0-120mm/m
Total weight 2200kg
Floor space 2200*1200mm
 
Optional Choice Specification
Controls Digital  /  Touch-screen PLC
Pressure Source Integrated with PLC
Facing & Grooving system Digital  /  Manual control feeding depth integrated with PLC  /   
PLC control feeding depth integrated with PLC
Plate cooling system Integrated in Machine
Slurry supply system Digital  /  integrated with PLC
Cylinder Bar Drive System Integrated with PLC
Dust Vacuum system Manual  /  Integrated with PLC

1,Sample making based on production requirement can confirm the necessity of optional kits.
2,The shaded options is buit in this machine.
3,Facing and Grooving system is unnecessary for polishing machine and not configured.
4,Substrate Lapping/Polishing machine is highly configured, A dust-proof shelter is utilized for protection from fugitive or solid particle scraping against object's surface while processing, especially when polishing.
5,Contact us for more type of lapping/polishing machine



 
Samples

Sample Record


Application & Material
 

MDS8104LMFR/MDS8104PMFR

SEMIAUTO SUBSTRATE LAPPING/POLISHING MACHINE
Machine Application

Process Type

Sort by Process Material

 

Sort by Application
SINGLE SIDE
PLATE
LAPPING &
POLISHING
Metal & Alloy
Ceramic
Oxide
Carbide
Glass
Plastic

Semi Conductor
LED substrate
Si, SiC, Ge, Ge-Si, GaN, GaAs, GaAsAl, GaAsP, InSb, InP, ZnO, AlN, Al2O3, etc.
Resin PE,E/VAC,SBS,SBR,NBR,SR,BR,PR
PCB ,, adhensive,coating,circuit
Optical ,,HUDoptical lens,HUD glass, screen glass
Radar
Gemstaone
Others
Oxide coating plate
Jade,sapphire,agate etc
Valve sealing ring. Micrometer Diamond,bearing,etc
Lapping can only remove slight thickness of object.if thining margin>=100um, thinner machine are needed.(contact us for thinner)
Machine Specification
Machine Class
       
()
Flat Lapping
Machine
()
Double Disc
Lapping Machine

Brush Polishing
Machine

Substrate Grinding/Thinning Machine
 
Standard Specification
Machine Series MDS8104LMFR
Plate diameter Φ810mm
Max. Object Diameter Φ350 mm
Number of station 4
Plate Rotate Speed 0-90 RPM
Cylinder Bar Rotate Speed 0-40 RPM
Facing & Grooving Speed
Not include in Polishing
0-120mm/m
Total weight 2200kg
Floor space 2200*1200mm
 
Optional Choice Specification
Controls Digital  /  Touch-screen PLC
Pressure Source Integrated with PLC
Facing & Grooving system Digital  /  Manual control feeding depth integrated with PLC  /   
PLC control feeding depth integrated with PLC
Plate cooling system Integrated in Machine
Slurry supply system Digital  /  integrated with PLC
Cylinder Bar Drive System Integrated with PLC
Dust Vacuum system Manual  /  Integrated with PLC

1,Sample making based on production requirement can confirm the necessity of optional kits.
2,The shaded options is buit in this machine.
3,Facing and Grooving system is unnecessary for polishing machine and not configured.
4,Substrate Lapping/Polishing machine is highly configured, A dust-proof shelter is utilized for protection from fugitive or solid particle scraping against object's surface while processing, especially when polishing.
5,Contact us for more type of lapping/polishing machine



 
Samples

Sample Record


Application & Material

Diagonal Diameter

Process
Type

Flatness

Roughness

Parallel

Thickness

Note
  Industrial Sapphire

 
various Lapping
Polishing
2μm ≤Ra 0.02 μm 5μm
±1μm
0.2mm N
  Solar Wafer Various Lapping 1μm Not Required 2μm
±1μm
0.15mm N
  Substrate
CaC2
Φ22mm Lapping 0.5μm Not Required 1μm
±0.5μm
0.05mm N
  Wafer
Si
Various Lapping
Polishing
2μm ≤Ra 0.02 μm 3μm
±1μm
0.1mm N
  LED substrate copper Φ169mm Lapping
Polishing
5μm ≤Ra 0.01 μm 5μm
±1μm
Not required N
  Substrate
MgO
Φ72mm Lapping 1μm Not Required 1μm 0.1mm N
  Substrate
Al2O3
Φ158mm Lapping
Polishing
3um ≤Ra 0.02 μm 3um
±1μm
0.13mm N
 
 
                               

onal Diameter

Process
Type

Flatness
Roughness
Parallel

Thickness

Note
  Industrial Sapphire

 
various Lapping
Polishing
2μm ≤Ra 0.02 μm 5μm
±1μm
0.2mm N
  Solar Wafer Various Lapping 1μm Not Required 2μm
±1μm
0.15mm N
  Substrate
CaC2
Φ22mm Lapping 0.5μm Not Required 1μm
±0.5μm
0.05mm N
  Wafer
Si
Various Lapping
Polishing
2μm ≤Ra 0.02 μm 3μm
±1μm
0.1mm N
  LED substrate copper Φ169mm Lapping
Polishing
5μm ≤Ra 0.01 μm 5μm
±1μm
Not required N
  Substrate
MgO
Φ72mm Lapping 1μm Not Required 1μm 0.1mm N
  Substrate
Al2O3
Φ158mm Lapping
Polishing
3um ≤Ra 0.02 μm 3um
±1μm
0.13mm N
 
 
                               

 

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