PR Removal Equipment Serious
RIE PLASMA Photoresist Remover
Application:
Silicon carbide etching
Surface cleaning after etching
DESCUM
Hard mask layer, dry removal
Silicon oxide or silicon nitride etching
Removal of optical resistance between media
Surface residue removal
| PLASMA source |
microwave |
| power |
0-1250W |
| working space |
6 magazine ranges (magazine size range: L260mmxW95mmxH190mm) |
| processing capacity |
35um Pitch/40um Bump15x15mm maximum Die size |
| Appearance dimensions |
480mmx470mmx500mm |
| System control |
Industrial control system |
| Automation level |
Manual |
Core Advantage
High degumming rate: High-density plasma, fast degumming rate
Stability: After plasma treatment, high reproducibility
Remote plasma: Remote plasma, low ion damage to wafer
Featured software: independent research and development of software, intuitive process animation, detailed data and records
Uniformity: Plasma can control pressure and temperature through butterfly valve
Safety factor: Low plasma reduces damage to product discharge.
After-sales service: Fast response and sufficient inventory
Dust control: Meet customer requirements.
Core technology: With nearly 40% of the R&D team members
Advantages of Equipment structure
Cassette Platform (MD-ST 6100/620)1. 4 Wafer Carriers
2. High compatibility: the flexibility of wafer size selection brings high cost and solution efficiency
3. High stability vacuum transfer chamber:
The mature and stable vacuum transmission design has been maturely applied in the market for many years and is well recognized by customers.
Turntable design, compact space, significantly reducing the risk of PARTICAL
4. Humanized software operation interface:
Intuitive humanized software operation interface, real-time monitoring of machine running Status;
Comprehensive alarm and fool-proof functions to avoid mis-operation.
Powerful data export function, records of various process parameters, and export of product production records.
Robot
1. One time dual wafer pick and place design brings high productivity
2. Improve space efficiency.
Heating Plate
1. High-precision temperature control wafer plate
Wafer heating plate from room temperature to 250°C, temperature control accuracy ±1°C
Wafer heating plate has been calibrated by professional instruments, and the uniformity. Within ±3°C, ensure the uniformity of glue removal
2. Single-chamber dual-wafer processing
Single-chamber dual-wafer design;
Independent power discharge design for each wafer, ensuring that each wafer. Round PR removal effect;
Under the premise of ensuring UPH efficiency, reduce product cost. Strong compatibility
3. Production capacity: double-piece design reaction chamber, high production efficiency.
Test Report:
Factory View:
Audited Supplier 
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