Silicon-Based III-V II-VI Magnetic Pr Materials Semiconductor Chip Manufacturing Etching Reactive Ion Etching Machine Rie

Product Details
After-sales Service: 1 Year
Warranty: 1 Year
Type: Rie
Still deciding? Get samples of $ !
Request Sample
Diamond Member Since 2017

Suppliers with verified business licenses

Audited Supplier Audited Supplier

Audited by an independent third-party inspection agency

Year of Establishment
2014-12-30
Registered Capital
147802.18 USD
  • Silicon-Based III-V II-VI Magnetic Pr Materials Semiconductor Chip Manufacturing Etching Reactive Ion Etching Machine Rie
  • Silicon-Based III-V II-VI Magnetic Pr Materials Semiconductor Chip Manufacturing Etching Reactive Ion Etching Machine Rie
  • Silicon-Based III-V II-VI Magnetic Pr Materials Semiconductor Chip Manufacturing Etching Reactive Ion Etching Machine Rie
  • Silicon-Based III-V II-VI Magnetic Pr Materials Semiconductor Chip Manufacturing Etching Reactive Ion Etching Machine Rie
  • Silicon-Based III-V II-VI Magnetic Pr Materials Semiconductor Chip Manufacturing Etching Reactive Ion Etching Machine Rie
  • Silicon-Based III-V II-VI Magnetic Pr Materials Semiconductor Chip Manufacturing Etching Reactive Ion Etching Machine Rie
Find Similar Products

Basic Info.

Model NO.
MD150
Certification
CE
Etching Type
Double Spray
Precision
High Precision
Condition
New
Transport Package
Wooden Case
Trademark
minder-hightech
Origin
China
Production Capacity
1000

Product Description

Reactive ion etching system (RIE)

Reactive ion etching (RIE) can be used to prepare micro-nano structures and is one of the semiconductor manufacturing process technologies. During the RIE etching process, various active particles in the plasma form volatile products with the surface of the material. These products are taken away from the surface of the material, and finally anisotropic microstructure etching of the surface of the material is achieved. The reactive ion etcher (RIE) series products are based on flat-plate capacitive coupled plasma technology and are suitable for patterned etching of silicon materials such as single crystal silicon, polycrystalline silicon, silicon nitride (SiNy), silicon oxide (SiO), quartz (Quartz) and silicon carbide (SiC); can be used for patterning and material de-layering etching of organic materials such as photoresist (PR), PMMAHDMS and other materials; can be used for physical etching of metal materials such as nickel (Ni), chromium (Cr) and ceramic materials; can be used for room temperature indium phosphide (InP) material etching. For some etching with higher process requirements, our ICP RIE etching can also be used.

Silicon-Based III-V II-VI Magnetic Pr Materials Semiconductor Chip Manufacturing Etching Reactive Ion Etching Machine RieSilicon-Based III-V II-VI Magnetic Pr Materials Semiconductor Chip Manufacturing Etching Reactive Ion Etching Machine RieSilicon-Based III-V II-VI Magnetic Pr Materials Semiconductor Chip Manufacturing Etching Reactive Ion Etching Machine RieSilicon-Based III-V II-VI Magnetic Pr Materials Semiconductor Chip Manufacturing Etching Reactive Ion Etching Machine Rie
Main Configuration:
1. Support sample size: 4, 8, 12 inches, compatible with various small size samples, support customization
2. RF plasma power range: 300/500/1000 W optional;
3. Molecular pump: 620/1300 //s optional, optional anti-corrosion pump set;
4. Fore pump: mechanical oil pump/dry pump optional;
5. Pressure control: 0 ~1 Torr optional; non-pressure control mode configuration can also be selected,
6. Process gas: up to 9 process gases can be equipped at the same time; temperature: 10 degrees ~ room temperature/-30 degrees ~ room temperature/customizable temperature range,
9. Back helium cooling can be configured according to the application;
10. Removable anti-pollution lining;
11. Load-lock optional;
12. Fully automatic one-button control system;

RIE Applicable Materials:
1. Silicon-based materials: silicon (Si), silicon dioxide (SiO2), silicon nitride (SiNx), silicon carbide (SiC)
2. III-V materials: indium phosphide (InP), gallium arsenide (GaAs), gallium nitride (GaN)
3. II-VI materials: cadmium telluride (CdTe)
4. Magnetic materials/alloy materials
5. Metal materials: aluminum (AI), gold (Au), tungsten (W), titanium (Ti), tantalum (Ta)
6. Organic materials: photoresist (PR), organic polymer (PMMA/HDMS), organic thin film

RIE Related Applications:
1. Etching of silicon-based materials, nanoimprint patterns, array patterns and lens patterns;
2. Room temperature etching of indium phosphide (InP), patterned etching of InP-based devices in optical communications, including waveguide structures, resonant cavity structures, and ridge structures;
3. Etching of SiC materials, suitable for microwave devices, power devices, etc.;
4. Physical sputtering etching is applied to certain metals, such as nickel (Ni), chromium (Cr), ceramics and other materials that are difficult to etch chemically, and patterned etching of materials is achieved through physical bombardment;
5. Etching of organic materials is applied to etching, cleaning and removal of organic materials such as photoresist (Photo Resist), PMMA, HDMS, Polymer;
6. De-layering etching for chip failure analysis (Failure Analysis-FA);
7. Etching of two-dimensional materials: W, Mo two-dimensional materials, graphene;

Application Results:
Silicon-Based III-V II-VI Magnetic Pr Materials Semiconductor Chip Manufacturing Etching Reactive Ion Etching Machine RieSilicon-Based III-V II-VI Magnetic Pr Materials Semiconductor Chip Manufacturing Etching Reactive Ion Etching Machine RieSilicon-Based III-V II-VI Magnetic Pr Materials Semiconductor Chip Manufacturing Etching Reactive Ion Etching Machine RieSilicon-Based III-V II-VI Magnetic Pr Materials Semiconductor Chip Manufacturing Etching Reactive Ion Etching Machine RieSilicon-Based III-V II-VI Magnetic Pr Materials Semiconductor Chip Manufacturing Etching Reactive Ion Etching Machine RieSilicon-Based III-V II-VI Magnetic Pr Materials Semiconductor Chip Manufacturing Etching Reactive Ion Etching Machine RieSilicon-Based III-V II-VI Magnetic Pr Materials Semiconductor Chip Manufacturing Etching Reactive Ion Etching Machine RieSilicon-Based III-V II-VI Magnetic Pr Materials Semiconductor Chip Manufacturing Etching Reactive Ion Etching Machine Rie
Project configuration and machine structure diagram
Item MD150-RIE MD200-RIE MD200C-RIE
Product size ≤6 inches ≤8 inches ≤8 inches
RF power source 0-300W/500W/1000W Adjustable,automatic matching
Molecular pump -/620(L/s)/1300(L/s)/Custom Antiseptic620(L/s)/1300(L/s)/Custom
Foreline pump Mechanical pump/dry pump Dry pump
Process pressure Uncontrolled pressure/0-1Torr controlled pressure
Gas type H/CH4/O2/N2/Ar/SF6/CF4/
CHF3/C4F8/NF3/Custom
(Up to 9 channels, no corrosive & toxic gas)
H2/CH4/O2/N2/Ar/F6/CF4/ CHF3/C4F8/NF3/Cl2/BCl3/HBr(Up to 9 channels)
Gas range 0~5sccm/50sccm/100sccm/200sccm/300sccm/500sccm/custom
LoadLock Yes/No Yes
Sample tem control 10°C~Room tem/-30°C~100°C/Custom -30°C~100°C /Custom
Back helium cooling Yes/No Yes
Process cavity lining Yes/No Yes
Cavity wall tem control No/Roomtem~60/120°C Room tem-60/120°C
Control System Auto/custom
Etching material Silicon-based:Si/SiO2/SiNx···
IV-IV: SiC
Magnetic materials/alloy materials
Metallic material: Ni/Cr/Al/Au.....
Organic material: PR/PMMA/HDMS/Organic
film......
Silicon-based: Si/SiO2/SiNx......
III-V(3): InP/GaAs/GaN......
IV-IV: SiC
II-VI (3): CdTe......
Magnetic materials/alloy materials
Metallic material: Ni/Cr/A1/Au......
Organic material: PR/PMMA/HDMS /organic film...

Factory and Laboratory Shooting:
Silicon-Based III-V II-VI Magnetic Pr Materials Semiconductor Chip Manufacturing Etching Reactive Ion Etching Machine RieSilicon-Based III-V II-VI Magnetic Pr Materials Semiconductor Chip Manufacturing Etching Reactive Ion Etching Machine RieSilicon-Based III-V II-VI Magnetic Pr Materials Semiconductor Chip Manufacturing Etching Reactive Ion Etching Machine RieSilicon-Based III-V II-VI Magnetic Pr Materials Semiconductor Chip Manufacturing Etching Reactive Ion Etching Machine RieSilicon-Based III-V II-VI Magnetic Pr Materials Semiconductor Chip Manufacturing Etching Reactive Ion Etching Machine RieSilicon-Based III-V II-VI Magnetic Pr Materials Semiconductor Chip Manufacturing Etching Reactive Ion Etching Machine Rie
Package:
Silicon-Based III-V II-VI Magnetic Pr Materials Semiconductor Chip Manufacturing Etching Reactive Ion Etching Machine RieSilicon-Based III-V II-VI Magnetic Pr Materials Semiconductor Chip Manufacturing Etching Reactive Ion Etching Machine Rie

Minder-Hightech is sales and service representative in semiconductor and electronic product industry equipment. 
Since 2014,the company is committed to providing customers with Superior, Reliable, and One-Stop Solutions for machinary equipment. 


FAQ
1. About Price:
All of our prices are competitive and negotiable. The price varies depending on the configuration and customization complexity of your device.

2. About Sample:
We can provide sample production services for you, but you may provide some fees.

3. About Payment:
After the plan is confirmed, you need to pay us a deposit first, and the factory will start preparing the goods. After the equipment is ready and you pay the balance, we will ship it.

4. About Delivery:
After the equipment manufacturing is completed, we will send you the acceptance video, and you can also come to the site to inspect the equipment.

5. Installation and Debugging:
After the equipment arrives at your factory, we can dispatch engineers to install and debug the equipment. We will provide you with a separate quotation for this service fee.

6. About Warranty:
Our equipment has a 12-month warranty period. After the warranty period, if any parts are damaged and need to be replaced, we will only charge the cost price.
 

Send your message to this supplier

*From:
*To:
*Message:

Enter between 20 to 4,000 characters.

This is not what you are looking for? Post a Sourcing Request Now
Contact Supplier