Reactive Ion Etching Syste Inductive Coupling Plasma Etching (icp)

• After-sales Service: Installation, Training
• Warranty: One Year Warranty
• Type: Electrical Etching Machine
• Object: Silicon-Based:Si/Sio2/Sinxsic
• Usage: Corrosion & Hollowed-out
• Certification: ISO9001: 2000, CE
• Etching Type: Reactive Ion Etching
• Precision: High Precision
• Condition: New
• Transport Package: Wooden Case
• Specification: 1170*750*1080mm
• Trademark: Minder-Hightech
• Origin: China
• Production Capacity: 10set/Month

Product Description

Reactive ionomer etching machine

Item	MD150-RIE	MD200-RIE	MD200C-RIE
Product size	≤6 inches	≤8 inches	≤8 inches
RF power source	0-300W/500W/1000W Adjustable,automatic matching
Molecular pump	-/620(L/s)/1300(L/s)/Custom		Antiseptic620(L/s)/1300(L/s)/Custom
Foreline pump	Mechanical pump/dry pump		Dry pump
Process pressure	Uncontrolled pressure/0-1Torr controlled pressure
Gas type	H/CH4/O2/N2/Ar/SF6/CF4/ CHF3/C4F8/NF3/Custom (Up to 9 channels, no corrosive & toxic gas)		H2/CH4/O2/N2/Ar/F6/CF4/ CHF3/C4F8/NF3/Cl2/BCl3/HBr(Up to 9 channels)
Gas range	0~5sccm/50sccm/100sccm/200sccm/300sccm/500sccm/custom
LoadLock	Yes/No		Yes
Sample tem control	10°C~Room tem/-30°C~100°C/Custom		-30°C~100°C /Custom
Back helium cooling	Yes/No		Yes
Process cavity lining	Yes/No		Yes
Cavity wall tem control	No/Roomtem~60/120°C		Room tem-60/120°C
Control System	Auto/custom
Etching material	Silicon-based:Si/SiO2/SiNx··· IV-IV: SiC Magnetic materials/alloy materials Metallic material: Ni/Cr/Al/Au..... Organic material: PR/PMMA/HDMS/Organic film......		Silicon-based: Si/SiO2/SiNx...... III-V(3): InP/GaAs/GaN...... IV-IV: SiC II-VI (3): CdTe...... Magnetic materials/alloy materials Metallic material: Ni/Cr/A1/Au...... Organic material: PR/PMMA/HDMS /organic film...

Process result
Silicon-based material etching
Silicon-based materials, nano-imprint patterns, array
patterns and lens pattern etching

InP normal temperature etching
Pattern etching of InP based devices used in optical communication, including waveguide structure, resonant cavity structure ridge structure etc

SiC material etching
Suitable for microwave devices, power devices, etc


Physical sputtering, etching  Organic materiale tching

It is applied to the etching of difficult to etch materials such as some metals (such as Ni / Cr) and ceramics, and the patternede tching of materials is realized by physical bombardment.

It is used for etching and removal of organic compounds such as photoresist (PR)/ PMMA / HDMS / polymer

Cermet film material (Au/Ni/Cr/Al₂O₃)